Samsung announced the demonstration of the world’s first in-memory computing based on MRAM (Magnetorestive Random Access Memory).
The article on this innovation has already been published online by Nature, and will be published in the next paper edition of the scientific magazine.
Entitled •A crossbar array of magnetopositive memory devices for in-memory computing • •The article is the result of Samsung’s activities aimed at combining memory technologies and system semiconductors
The research was conducted by the Samsung Advanced Institute of Technology (SAIT) in close collaboration with the business unit Foundry and the semiconductor R&D Center of Samsung Electronics.
The first author of the article, Dr. Seungchul Jung, Staff Researcher at SAIT, and co-authors, Dr. Donhee Ham, Fellow of SAIT and professor of Harvard University,
In the standard computer architecture ,
On the contrary, l’in-memory computing is a new computer paradigm that tries to perform both storage and data processing in a memory network.
Since this scheme can process a large amount of data stored within the memory network itself, without having to move the data, and as such processing is performed in a highly parallel manner, energy consumption is substantially reduced.
For this reason, research into in-memory computing has been intensively explored worldwide.
Non-volatile memories, in particular RRAM (Resistent Random Access Memory) and PRAM (Phase-change Random Access Memory), have been actively used to demonstrate in-memory computing.
On the contrary • highlights Samsung • • • • • • • • • • Despite the positive points of the MRAM itself, such as the speed of operation, durability and large-scale production.
Researchers at Samsung Electronics provided a solution to this problem with an innovation in architecture.
In practice, researchers have managed to develop an MRAM array chip that demonstrates the in-memory computing, replacing the standard in-memory computing architecture…current-sum… with a new…resistance architecture on
Samsung’s research team then tested the performance of this in-memory computing MRAM chip in artificial intelligence. The
Bringing MRAM “that has already achieved production on a commercial scale, incorporated in the semiconductor manufacturing system “in the domain of in-memory computing,” this work according to Samsung opens the way for the technologies of chip of artificial intelligence to low
Researchers have also suggested that not only this new MRAM chip can be used for l’in-memory computing, but can also serve as a platform for biological neuronal networks.